Publication record · 18.cifr/1980.klitzing.quantum-hall-alpha
18.cifr/1980.klitzing.quantum-hall-alphaMeasurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance RH = UH/I has well-defined constant values for different filling factors of the Landau levels. The accuracy of the determination of the fine-structure constant alpha from these measurements is better than 10 ppm.
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Extension to fractional quantum Hall states raises the question of whether fractional filling factors yield equally fundamental resistance standards. Graphene-based devices now exhibit the quantum Hall effect at room temperature, suggesting practical metrological standards without cryogenic infrastructure. Linking R_K to the revised SI kilogram via the watt balance completes a self-consistent set of quantum electrical standards.